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PDF Si8800EDB Data sheet ( Hoja de datos )
| Número de pieza | Si8800EDB | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
N-Channel 20 V (D-S) MOSFET
Si8800EDBwww.DataSheet4U.com
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.080 at VGS = 4.5 V
0.090 at VGS = 2.5 V
0.105 at VGS = 1.8 V
0.150 at VGS = 1.5 V
ID (A)a
2.8
2.6
2.4
2.0
Qg (Typ.)
3.2 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Small 0.8 mm x 0.8 mm Outline
• Ultra Thin 0.357 mm Height
• Typical ESD Protection 1500 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices such as Cell Phones,
Smart Phones and MP3 Players
- Load Switch
- Small Signal Switch
R
G
SD
34
Device Marking: 800
xxx = Date/Lot Traceability Code
Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
20
±8
2.8a
2.2a
2.0b
1.6b
15
0.7a
0.4b
0.9a
0.6a
0.5b
0.3b
- 55 to 150
260
D
S
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
Maximum Junction-to-Ambientb, e
t≤5s
Symbol
RthJA
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
Typical
105
200
Maximum
135
260
Unit
°C/W
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by RDS(on)*
10
1
100 μs
1 ms
Si8800EDBwww.DataSheet4U.com
Vishay Siliconix
0.1 TA = 25 °C
10 ms
Single Pulse
100 ms, 1 s
BVDSS Limited
10 s, DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
3.0 0.8
2.5
0.6
2.0
1.5 0.4
1.0
0.2
0.5
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Current Derating*
Note:
When mounted on 1" x 1" FR4 with full copper.
150
0.0
25
50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66700
S10-1046-Rev. A, 03-May-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si8800EDB.PDF ] | |
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