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PDF AUIRFZ44Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRFZ44Z | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AUIRFZ44Z (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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AUTOMOTIVE GRADE
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
D
G
S
www.DaPtaDShe-et94U7.5co4m3
AUIRFZ44Z
AUIRFZ44ZS
HEXFET® Power MOSFET
V(BR)DSS
RDS(on) max.
ID
55V
13.9mΩ
51A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other appli-
cations.
DD
DS
G
TO-220AB
AUIRFZ44Z
DS
G
D2Pak
AUIRFZ44ZS
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
Max.
51
36
200
80
0.53
± 20
86
105
See Fig.12a,12b,15,16
-55 to + 175
300
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/23/2010
1 page  
AUIRFZ44Z/ZSwww.DataSheet4U.com
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
ID= 31A
10.0
8.0
VDS= 44V
VDS= 28V
VDS= 11V
6.0
4.0
2.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
30
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
10
1 TJ = 25°C
0.10
0.01
0.0
VGS = 0V
0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
2.0
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
AUIRFZ44Z/ZSwww.DataSheet4U.com
D2Pak (TO-263AB) Part Marking Information
Part Number
IR Logo
AUIRFZ44ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AUIRFZ44Z.PDF ] | |
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