|
|
PDF AUIRF3205Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRF3205Z | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRF3205Z (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 97542
AUTOMOTIVE GRADE
AUIRF3205Z
Features
AUIRF3205ZS
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to
Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max.
6.5mΩ
G
ID (Silicon Limited)
110A
S ID (Package Limited)
75A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
DD
DS
G
TO-220AB
AUIRF3205Z
DS
G
D2Pak
AUIRF3205ZS
G
Gate
D
Drain
S
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
110
78 A
75
440
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
170 W
1.1 W/°C
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
± 20
180
250
See Fig.12a, 12b, 15, 16
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
iSoldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
y y300
10 lbf in (1.1N m)
°C
Parameter
RθJC
RθCS
RθJA
RθJA
kJunction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/23/2010
1 page  
6000
5000
4000
3000
2000
1000
0
1
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
www.DataSheet4U.com
AUIRF3205Z/ZS
20
ID= 66A
16
12
VDS= 44V
VDS= 28V
VDS= 11V
8
4
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0 TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6 1.0 1.4 1.8
VSD, Source-toDrain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
www.irf.com
Forward Voltage
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1
Tc = 25°C
Tj = 175°C
0.1 Single Pulse
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page 
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
www.DataSheet4U.com
AUIRF3205Z/ZS
D2Pak (TO-263AB) Part Marking Information
Part Number
IR Logo
AUIRF3205ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AUIRF3205Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRF3205 | Power MOSFET ( Transistor ) | International Rectifier |
| AUIRF3205Z | Power MOSFET ( Transistor ) |  Infineon |
| AUIRF3205Z | HEXFET Power MOSFET | International Rectifier |
| AUIRF3205ZS | Power MOSFET ( Transistor ) | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |