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PDF BUL642D2 Data sheet ( Hoja de datos )
| Número de pieza | BUL642D2 | |
| Descripción | High Gain Bipolar NPN Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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BUL642D2
High Speed, High Gain
Bipolar NPN Transistor with
Integrated
Collector−Emitter and
Built−in Efficient
Antisaturation Network
The BUL642D2 is a state−of−the−art High Speed High Gain
Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to
lot minimum spread (150 ns on storage time) make it ideally suitable
for Light Ballast Application. A new development process brings
avalanche energy capability, making the device extremely rugged.
Features
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector−Emitter Free Wheeling Diode
• Fully Characterized Dynamic VCEsat
• “Six Sigma” Process Providing Tight and Reproducible Parameter
Spreads
• Avalanche Energy 20 mJ Typical Capability
• Pb−Free Package is Available*
www.DataSheet4U.com
http://onsemi.com
3 AMPERES
825 VOLTS
75 WATTS
POWER TRANSISTOR
1
2
3
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
BUL642D2G
AYWW
BUL642D2
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 1
1
ORDERING INFORMATION
Device
BUL642D2
BUL642D2G
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
Publication Order Number:
BUL642D2/D
1 page  
BUL642D2
www.DataSheet4U.com
10 10
−20°C
1.0
IC/IB = 5.0
0.1
0.01
25°C
125°C
0.1 1.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 7. Base−Emitter Saturation Voltage
−20°C
1.0
25°C
125°C
0.1
0.01 IC/IB = 10
0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 8. Base−Emitter Saturation Voltage
10
−20°C
1.0
25°C
125°C
0.1
10
1.0 25°C
125°C
IC/IB = 20
0.01
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 9. Base−Emitter Saturation Voltage
0.1
0.01
0.1 1.0
REVERSE EMITTER−COLLECTOR (AMP)
Figure 10. Forward Diode Voltage
10
1000
100
10
1.0
10000
Cib
Ib2 = IC/2 @ 125°C
1000
Ib2 = IC @ 125°C
Cob
10
100 Ib2 = IC @ 25°C
Ib2 = IC/2 @ 25°C
VCC = 125 V, Pw = 100 mS, G = 10
10
100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
Vr, REVERSE VOLTAGE (V)
Figure 11. Capacitance
http://onsemi.com
5
Figure 12. Resistive Switch Time,
Storage Time TON
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUL642D2.PDF ] | |
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