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Número de pieza | STGIPS14K60 | |
Descripción | IGBT intelligent power module (IPM) | |
Fabricantes | STMicroelectronics | |
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STGIPS14K60
IGBT intelligent power module (IPM)
12 A, 600 V, DBC isolated, SDIP-25L molded
Features
■ 12 A, 600 V 3-phase IGBT inverter bridge
including control ICs for gate driving and free-
wheeling diodes
■ 3.3 V, 5 V, 15 V CMOS/TTL inputs
comparators with hysteresis and pull down /
pull up resistors
■ Internal bootstrap diode
■ Interlocking function
■ VCE(sat) negative temperature coefficient
■ Short-circuit rugged IGBTs
■ Undervoltage lockout
■ Smart shutdown function
■ Comparator for fault protection against over
temperature and overcurrent
■ DBC fully isolated package
■ Isolation rating of 2500 Vrms/min
Applications
■ 3-phase inverters for motor drives
■ Home appliances, such as washing machines,
refrigerators, air conditioners
Description
The STGIPS14K60 intelligent power module
provides a compact, high performance AC motor
drive for a simple and rugged design. It mainly
targets low power inverters for applications such
as home appliances and air conditioners. It
combines ST proprietary control ICs with the most
advanced short circuit rugged IGBT system
Table 1. Device summary
Order code
Marking
STGIPS14K60
GIPS14K60
SDIP-25L
technology. Please refer to dedicated technical
note TN0107 for mounting instructions.
Package
SDIP-25L
Packaging
Tube
June 2010
Doc ID 15927 Rev 3
1/19
www.st.com
19
1 page STGIPS14K60
2 Electrical ratings
www.DataSheet4U.com
Electrical ratings
2.1
Absolute maximum ratings
Table 3. Inverter part
Symbol
Parameter
Value
VPN Supply voltage applied between P - NU, NV, NW
450
VPN(surge)
VCES
Supply voltage (surge) applied between P - NU,
NV, NW
Collector emitter voltage (VIN(1) = 0)
500
600
± IC(2)
± ICP (3)
Each IGBT continuous collector current
at TC = 25°C
Each IGBT pulsed collector current
12
30
PTOT Each IGBT total dissipation at TC = 25°C
33
tscw
Short circuit withstand time, VCE = 0.5 V(BR)CES
TJ = 125 °C, VCC = Vboot= 15 V, VIN (1)= 0 ÷ 5 V
5
1. Applied between HINi, LINi and GND for i = U, V, W
2. Calculated according to the iterative formula:
IC(TC)
=
--------------------------------------T----j-(--m----a---x---)---–-----T---C----------------------------------------
Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
3. Pulse width limited by max junction temperature
Unit
V
V
V
A
A
W
µs
Table 4. Control part
Symbol
Parameter
VOUT
VCC
VCIN
Vboot
VIN
Output voltage applied between
OUTU, OUTV, OUTW - GND
Low voltage power supply
Comparator input voltage
Bootstrap voltage applied between
Vboot i - OUTi for i = U, V, W
Logic input voltage applied between HIN, LIN and
GND
VSD/OD Open drain voltage
dVOUT/dt Allowed output slew rate
Value
Vboot - 21 to Vboot + 0.3
-0.3 to +21
-0.3 to VCC +0.3
-0.3 to 620
-0.3 to 15
-0.3 to 15
50
Unit
V
V
V
V
V
V
V/ns
Doc ID 15927 Rev 3
5/19
5 Page STGIPS14K60
www.DataSheet4U.com
Electrical characteristics
Figure 5. Maximum IC(RMS) current vs.
switching frequency (1)
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931 90RGXODWLRQLQGH[
3) 7- &I6,1( +]
7& &
7& &
Figure 6. Maximum IC(RMS) current vs. fSINE
(1)
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931 9PRGXODWLRQLQGH[
3) 7- &7& &
I6: N+]
I6: N+]
I6: N+]
I6: >N+]@
1. Simulated curves refer to typical IGBT parameters and maximum Rthj-c.
I6,1( >+]@
Doc ID 15927 Rev 3
11/19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet STGIPS14K60.PDF ] |
Número de pieza | Descripción | Fabricantes |
STGIPS14K60 | IGBT intelligent power module (IPM) | STMicroelectronics |
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