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Número de pieza | TK50P04M1 | |
Descripción | High-Efficiency DC-DC Converter Applications Switching Regulator | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TK50P04M1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TK50P04M1
High-Efficiency DC-DC Converter Applications
Switching Regulator
• High-speed switching
• Small gate charge: QSW = 9.4 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 6.7 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 105 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.6 ± 0.2
5.34 ± 0.13
Unit: mm
0.58MAX
1.14MAX
0.76 ± 0.12
2.29
Characteristic
Symbol
Rating
Unit
123
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
40
40
±20
50
150
60
65
50
4.4
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURSE
JEDEC
―
JEITA
―
TOSHIBA
2-7K1A
Weight: 0.36 g (typ.)
Note: For Notes 1 to 3, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2009-09-08
1 page RDS (ON) – Ta
20
Common source
Pulse test
16
ID = 50 A
12
25
12.5
8 VGS = 4.5 V
4 VGS = 10 V
ID = 12.5, 25, 50 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TK50P04M1
www.DataSheet4U.com
IDR – VDS
100
10
3
4.5
1
10 VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10 100
Drain-source voltage VDS (V)
Vth – Ta
3
2.5
2
1.5
1
Common source
VDS = 10 V
0.5 ID = 0.5 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
PD – Tc
100
80
60
40
20
0
0 40 80 120 160
Case temperature Tc (°C)
50
40
VDS
30
20
Dynamic input/output
characteristics
20
Common source
ID = 50 A
Ta = 25°C
Pulse test
16
VDD = 8 V
32
16
12
8
10
VGS
4
00
0 10 20 30 40 50
Total gate charge Qg (nC)
5 2009-09-08
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TK50P04M1.PDF ] |
Número de pieza | Descripción | Fabricantes |
TK50P04M1 | High-Efficiency DC-DC Converter Applications Switching Regulator | Toshiba Semiconductor |
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