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PDF TPCF8A01 Data sheet ( Hoja de datos )
| Número de pieza | TPCF8A01 | |
| Descripción | Notebook PC Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCF8A01
www.DataSheet4U.com
TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8A01
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
• Low forward voltage: VFM(2) = 0.46V(typ.)
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
SBD (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current (Note 2a, 6)
Peak one cycle surge forward current
(non-repetitive)
Symbol
VDSS
VDGR
VGSS
ID
IDP
EAS
IAR
EAR
Symbol
VRRM
IF(AV)
IFSM
Rating
20
20
±12
3
12
1.46
1.5
0.11
Unit
V
V
V
A
mJ
A
mJ
Rating
20
1.0
7(50Hz)
Unit
V
A
A
JEDEC
―
JEITA
―
TOSHIBA
2-3U1C
Weight: 0.011 g (typ.)
Circuit Configuration
87 65
Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)
Characteristics
Drain power
dissipation
Single-device operation
(Note 3a)
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Symbol
PD (1)
PD (2)
PD (1)
PD (2)
Rating
1.35
1.12
0.53
0.33
Unit
W
1 2 34
Channel temperature
Storage temperature range
Tch 150
Tstg -55~150
°C
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2007-01-16
1 page  
RDS (ON) – Ta
120
Common source
100 Pulse Test
VGS = 2.0 V
ID = 1.5A,0.75A
80
ID = 3A
60
VGS = 2.5 V
40 ID = 3A,1.5A,0.75A
20
VGS = 4.5 V
ID = 3A,1.5A,0.75A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCF8A01
www.DataSheet4U.com
10
10
5
IDR – VDS
2.0
3 2.5
VGS = 0 V
1
0.5
0.3 Common source
Ta = 25°C
Pulse Test
0.1
0 −0.4 −0.8 −1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
100 Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
Vth – Ta
1.2
1
0.8
0.6
0.4 Common source
VDS = -10 V
0.2 ID = -200μA
Pulse Test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
t=5s
1.6
(1)
1.2 (2)
PD – Ta
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
ｔ＝5S
0.8
(3)
0.4 (4)
0
0 40 80 120 160
Ambient temperature Ta (°C)
5
Dynamic input / output
characteristics
20
16 VDS
12
6
4
8
VDD = 16 V 4
VGS
8
Common source
2
4 ID = -3 A
Ta = 25°C
PULSE TEST
00
0 2 4 6 8 10
Total gate charge Qg (nC)
2007-01-16
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TPCF8A01.PDF ] | |
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