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PDF TPCA8028-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8028-H | |
| Descripción | High Efficiency DC/DC Converter Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCA8028-H
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8028-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
0.5±0.1 1.27
8
0.4±0.1
5
Unit: mm
0.05 M A
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 20 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 2.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 166 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
0.95±0.05
14
5 .0 ± 0 .2
0.595
A
0.166±0.05
S 0.05 S
1 4 1.1±0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
4.25±0.2
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
Note: For Notes 1 to 4, refer to the next page.
30
30
±20
50
150
45
2.8
1.6
325
50
4.03
150
−55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
8
1,2,3:SOURCE
5,6,7,8:DRAIN
5 0.8±0.1
4:GATE
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2008-01-22
1 page  
RDS (ON) – Ta
5
Common source
Pulse test
4
ID = 12.5A,25A,50A
3
2 VGS = 4.5 V
ID = 12.5A,25A,50A
1 VGS = 10 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCA8028-H
www.DataSheet4U.com
100
10
IDR – VDS
4.5
3
10
1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Ciss
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
2.0
1.5
1.0
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
50
Common source
ID = 50 A
40 Ta = 25°C
Pulse test
30
VDS
20
10
VDD = 6 V
24
12
20
16
12
8
4
00
0 20 40 60 80 100
Total gate charge Qg (nC)
5
2008-01-22
5 Page | ||
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| PDF Descargar | [ Datasheet TPCA8028-H.PDF ] | |
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