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PDF TPCA8021-H Data sheet ( Hoja de datos )
| Número de pieza | TPCA8021-H | |
| Descripción | High Efficiency DC/DC Converter Applications | |
| Fabricantes | Toshiba Semiconductor | |
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TPCA8021-H
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8021-H
High Efficiency DC／DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 6.9nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 6.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| =46 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
27
81
45
2.8
1.6
95
27
2.7
150
−55 to 150
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.5±0.1 1.27
8
0 .4 ± 0 .1
5
0.05 M A
0 .1 5 ± 0 .0 5
0 .9 5 ± 0 .0 5
14
5.0±0.2
0.595
A
0 .1 6 6 ± 0 .0 5
S 0.05 S
1 4 1.1±0.2
4 .2 5 ± 0 .2
8 5 0.8±0.1
1,2,3：SOURCE 4：GATE
5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.068 g (typ.)
Circuit Configuration
8765
1234
1 2006-01-17
1 page  
RDS (ON) – Ta
20
Common source
Pulse test
16
ID = 27A
14A
12 7A
VGS = 4.5 V
8
4
VGS = 10 V
ID = 7A,14A,27A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCA8021-H
www.DataSheet4U.com
IDR – VDS
100
10
10
3
4.5
Common source
Ta = 25°C
Pulse test
1
0 −0.2 −0.4
1
−0.6
VGS = 0 V
−0.8
−1.0
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
2.5
2
1.5
1
Common source
VDS = 10 V
0.5 ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
50
Common source
ID = 27 A
40 Ta = 25°C
Pulse test
VDD = 6 V
30
VDS
20
24 V
12 V
20
16
12
8
10 4
00
0 8 16 24 32 40
Total gate charge Qg (nC)
5
2006-01-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8021-H.PDF ] | |
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