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Número de pieza | 2SK4019 | |
Descripción | DC-DC Converter and Motor Drive Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK4019 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TOSHIBA Field Effect Transistor
2SK4019
www.DataSheet4U.com
Silicon N-Channel MOS Type (L2−π−MOS V)
2SK4019
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain−source ON-resistance
: RDS (ON) = 0.17 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
6.5±0.2
5.2±0.2
0.9
2.3 2.3
Unit: mm
0.6 MAX.
1.1±0.2
0.6 MAX
Absolute Maximum Ratings (Ta = 25°C)
123
Characteristic
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
100
100
±20
5
20
20
180
5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
0.8 MAX.
1.1 MAX.
0.6±0.15
0.6±0.15
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 11.6 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-20
1 page 2SK4019
www.DataSheet4U.com
RG = 25 Ω
VDD = 25 V, L = 11.6 mH
EAS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎛
⎝
BVDSS
BVDSS − VDD
⎟⎞
⎠
5 2006-11-20
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK4019.PDF ] |
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