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Número de pieza | 2SK4013 | |
Descripción | Switching Regulator Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK4013
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
800
800
±30
6
18
45
317
6
4.5
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.5 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
1 2009-09-29
1 page rth – tw
10
2SK4013
www.DataSheet4U.com
1 Duty=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
10μ
100μ
1m
10m
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
100m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSE) *
10 ID max (CONTINUOUS) *
1 DC OPERATION
Tc = 25°C
1 ms *
100 μs *
0.1 *: SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature
0.01
1 10
100
VDSS max
1000
10000
DRAIN−SOURCE VOLTAGE VDS
IV
EAS - Tch
400
350
300
250
200
150
100
50
0
25 50 75 100 125
CHANNCEHLANTNEEML TPEEMRPEARTAUTURREE ((ININITIIATLIA) LT)cH (T℃c)h
150
(°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 14.5 mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK4013.PDF ] |
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