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PDF STN3N40K3 Data sheet ( Hoja de datos )
| Número de pieza | STN3N40K3 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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Features
STN3N40K3
N-channel 400 V, 3 Ω, 3 A SOT-223
SuperMESH3™ Power MOSFET
Preliminary data
Type
STN3N40K3
VDSS RDS(on) max ID
400 V < 3.3 Ω 3 A
PW
3.3 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse rcovery characteristics
■ Zener-protected
Application
■ Switching applications
Description
The device is made using the SuperMESH3TM
Power MOSFET technology that is obtained via
improvements applied to STMicroelectronics’
SuperMESH3TM technology combined with a new
optimized vertical structure. The resulting product
has an extremely low on resistance, superior
dynamic performance and high avalanche
capability, making it especially suitable for the
most demanding applications.
2
3
2
1
SOT-223
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code
STN3N40K3
Marking
3N40K3
Package
SOT-223
Packaging
Tape and reel
June 2010
Doc ID 17697 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/10
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STN3N40K3
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Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn on delay time
Rise time
Turn off delay time
Fall time
Test conditions
VDD = 200 V, ID = 0.9,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
Min.
-
Typ.
6
5
16
20
Max Unit
ns
ns
-
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 3 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time ISD = 1.8 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V
Reverse recovery current (see Figure 4)
trr
Qrr
IRRM
Reverse recovery time ISD = 1.8 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V, Tj = 150 °C
Reverse recovery current (see Figure 4)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
Typ.
175
550
6
185
600
6.5
Max. Unit
1.8 A
7.2 A
1.5 V
ns
nC
A
ns
nC
A
Doc ID 17697 Rev 1
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STN3N40K3.PDF ] | |
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