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PDF IXGR60N60C3C1 Data sheet ( Hoja de datos )
| Número de pieza | IXGR60N60C3C1 | |
| Descripción | GenX3 600V IGBT w/ SiC Anti-Parallel Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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GenX3TM 600V IGBT
w/ SiC Anti-Parallel
Diode
IXGR60N60C3C1
(Electrically Isolated Back Surface)
High Speed PT IGBT for 40-100kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
FC
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
Maximum Ratings
600
600
±20
±30
V
V
V
V
TC = 25°C (Limited by leads)
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
TC = 25°C
50/60 Hz, RMS, t = 1minute
IISOL < 1mA
t = 10 s
Mounting Force
75
30
13
260
40
400
ICM = 125
@ VCE ≤ VCES
170
-55 ... +150
150
-55 ... +150
2500
3000
20..120/4.5..27
A
A
A
A
A
mJ
A
W
°C
°C
°C
V~
V~
N/lb
Maximum Lead Temperature for Soldering
300 °C
1.6mm (0.062 in.) from Case for 10s
260 °C
5g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
ICES
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
TJ = 125°C
IGES
VCE(sat)
VCE = 0V, VGE = ±20V
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
125°C
Characteristic Values
Min. Typ. Max.
3.0 5.5 V
50 μA
1 mA
±100 nA
2.2 2.5 V
1.7 V
www.DataSheet4U.com
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 30A
≤£ 2.5V
= 50ns
ISOPLUS247TM
G
CE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Optimized for Low Switching Losses
z Square RBSOA
z Isolated Mounting Surface
z Anti-Parallel Ultra Fast Diode
z High Speed Silicon Carbide Schottky
Co-Pack Diode
- No Reverse Recovery
z 2500V Electrical Isolation
z Avalanche Rated
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS100098B(01/10)
1 page  
Fig. 12. Inductive Switching Energy Loss
vs. Gate Resistance
4.5 4.5
4.0 Eoff
Eon - - - -
3.5 TJ = 125ºC , VGE = 15V
VCE = 480V
3.0
4.0
3.5
3.0
2.5 I C = 80A
2.0
2.5
2.0
1.5 1.5
1.0 1.0
0.5 I C = 40A
0.5
0.0 0.0
3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching Energy Loss
vs. Junction Temperature
4.0
3.5 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
3.0 VCE = 480V
4.0
3.5
3.0
2.5 2.5
I C = 80A
2.0 2.0
1.5 1.5
1.0 1.0
0.5
I C = 40A
0.5
0.0 0.0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times
vs. Collector Current
180
160 t f
td(off) - - - -
RG = 3Ω , VGE = 15V
140 VCE = 480V
120
100 TJ = 125ºC
200
180
160
140
120
80 100
60 80
40 TJ = 25ºC
20
60
40
0 20
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXGR60N60C3C1www.DataSheet4U.com
Fig. 13. Inductive Switching Energy Loss
vs. Collector Current
3.0
2.5 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
VCE = 480V
2.0
1.5 TJ = 125ºC, 25ºC
3.0
2.5
2.0
1.5
1.0 1.0
0.5 0.5
0.0 0.0
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
170
160
150
140
130
120
110
100
90
80
70
60
3
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 480V
I C = 80A
I C = 40A
4 5 6 7 8 9 10 11 12 13 14
RG - Ohms
280
260
240
220
200
180
160
140
120
100
80
60
15
Fig. 17. Inductive Turn-off Switching Times
vs. Junction Temperature
160
140 t f
td(off) - - - -
RG = 3Ω , VGE = 15V
120 VCE = 480V
150
135
120
100
I C = 80A
105
80 90
I C = 40A
60 75
40 60
20 45
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGR60N60C3C1.PDF ] | |
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