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PDF IXFH16N90 Data sheet ( Hoja de datos )
| Número de pieza | IXFH16N90 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH16N90
IXFX16N90
VDSS
ID25
RDS(on)
= 900 V
= 16 A
= 0.65 W
trr £ 200 ns
Preliminary data
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
I DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
900 V
900 V
±20 V
±30 V
16 A
64 A
16 A
45 mJ
5 V/ns
360 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250µA
VDS = VGS, ID = 5 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
900
2.0
V
4.5 V
±100 nA
25 µA
250 µA
0.65 Ω
TO-247 AD
(IXFH)
(TAB)
PLUS 247TM
(IXFX)
C (TAB)
G
D
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic Rectifier
Applications
l DC-DC converters
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
l Temperature and lighting controls
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247TM)
l Space savings
l High power density
© 1998 IXYS All rights reserved
97547(2/98)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFH16N90.PDF ] | |
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