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PDF IXFN320N17T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN320N17T2 | |
| Descripción | GigaMOS TrenchT2 HiperFET Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advance Technical Information
www.DataSheet4U.com
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN320N17T2
VDSS =
ID25 =
RDS(on) ≤
trr ≤
170V
260A
5.2mΩ
150ns
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
170
170
V
V
±20 V
±30 V
260 A
200 A
800 A
100 A
5J
20 V/ns
1070
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
170 V
2.5 5.0 V
±200 nA
50 μA
5 mA
5.2 mΩ
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100189(09/09)
1 page  
IXFN320N17T2www.DataSheet4U.com
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
380
RG = 1Ω , VGS = 10V
340 VDS = 85V
300
I D = 200A
260
220
180
I D = 100A
140
100
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700
t r td(on) - - - -
600 TJ = 125ºC, VGS = 10V
VDS = 85V
500 I D = 200A
400
I D = 100A
300
240
200
160
120
80
200 40
100 0
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
700 220
600 200
500
t f td(off) - - - -
400 RG = 1Ω, VGS = 10V
VDS = 85V
300
200
TJ = 125ºC
TJ = 25ºC
180
160
140
120
100 100
0 80
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
360
320 RG = 1Ω , VGS = 10V
VDS = 85V
280
240
200
160 TJ = 125ºC
120
TJ = 25ºC
80
40
0
40 60 80 100 120 140 160 180
ID - Amperes
200
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
700
t f td(off) - - - -
600 RG = 1Ω, VGS = 10V
VDS = 85V
500
220
200
180
400
I D = 200A
300
I D = 100A
160
140
200 120
100 100
0 80
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
800
700 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
600 VDS = 85V
I D = 200A
800
700
600
500 500
400 400
I D = 100A
300 300
200 200
100 100
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFN320N17T2.PDF ] | |
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