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PDF IXFN240N15T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN240N15T2 | |
| Descripción | GigaMOS TrenchT2 HiperFET Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Advance Technical Information
www.DataSheet4U.com
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN240N15T2
VDSS =
ID25 =
RDS(on) ≤
trr ≤
150V
240A
5.2mΩ
140ns
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IL(RMS)
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
t = 1 minute
IISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
150
150
V
V
±20 V
±30 V
240 A
200 A
600 A
120 A
2J
20 V/ns
830 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
150 V
2.5 5.0 V
±200 nA
25 μA
3 mA
4.1 5.2 mΩ
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100192(09/09)
1 page  
IXFN240N15T2www.DataSheet4U.com
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
380
340 RG = 1Ω , VGS = 10V
VDS = 75V
300
260
I D = 240A
220
180
140 I D = 120A
100
60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
700
t r td(on) - - - -
600 TJ = 125ºC, VGS = 10V
VDS = 75V
500
210
180
150
400 120
I D = 240A
I D = 120A
300 90
200 60
100 30
00
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
400
350 t f
td(off) - - - -
RG = 1Ω, VGS = 10V
300 VDS = 75V
TJ = 125ºC
250
140
130
120
110
200 100
150 90
100
50 TJ = 25ºC
80
70
0 60
60 80 100 120 140 160 180 200 220 240
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
320
280 RG = 1Ω , VGS = 10V
VDS = 75V
240
200
160 TJ = 125ºC
120 TJ = 25ºC
80
40
0
60 80 100 120 140 160 180 200 220
ID - Amperes
240
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
600
t f td(off) - - - -
500 RG = 1Ω, VGS = 10V
VDS = 75V
400
120
110
100
300 I D = 240A
200 I D = 120A
100
90
80
70
0 60
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
700
t f td(off) - - - -
600 TJ = 125ºC, VGS = 10V
VDS = 75V
500
600
500
400
400
I D = 240A
I D = 120A 300
300 200
200 100
100 0
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFN240N15T2.PDF ] | |
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