|
|
PDF PSMN4R6-60PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN4R6-60PS | |
| Descripción | N-channel 60V 4.6m standard level MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PSMN4R6-60PS (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
PSMN4R6-60PS
www.DataSheet4U.com
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Rev. 01 — 11 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 30 V; see Figure 14
and 15
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package.
[1]
Min Typ Max Unit
- - 60 V
- - 100 A
- - 211 W
-55 -
175 °C
- 14.8 - nC
- 70.8 - nC
- 8.4 11.5 mΩ
- 3.5 4.6 mΩ
1 page  
NXP Semiconductors
www.DataSheet4U.com
PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
IDSS drain leakage current
IGSS gate leakage current
RDSon
drain-source on-state
resistance
RG gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
VGS(pl)
gate-source plateau
voltage
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
Min
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 10
and 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13
f = 1 MHz
54
60
2
-
1
-
-
-
-
-
-
-
-
ID = 0 A; VDS = 30 V; VGS = 10 V; see Figure 14
ID = 25 A; VDS = 30 V; VGS = 10 V; see Figure 14
and 15
ID = 25 A; VDS = 30 V; VGS = 10 V; see Figure 14
-
-
-
-
-
ID = 25 A; VDS = 30 V; VGS = 10 V; see Figure 14
and 15
VDS = 30 V; see Figure 14 and 15
-
-
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 16
-
-
-
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
-
-
-
-
IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 17
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
-
-
-
Typ Max Unit
--V
--V
34V
- 4.8 V
--V
0.05 10
µA
- 200 µA
10 100 nA
10 100 nA
8.4 11.5 mΩ
- 7.4 mΩ
3.5 4.6 mΩ
0.79 -
Ω
63 -
70.8 -
19.5 -
13.5 -
6-
14.8 -
4.3 -
4426
567
293
-
-
-
26 -
24 -
58 -
22 -
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
0.81 1.1
45 -
64 -
V
ns
nC
PSMN4R6-60PS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
www.DataSheet4U.com
PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN4R6-60PS_1
20100311
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PSMN4R6-60PS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 March 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PSMN4R6-60PS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PSMN4R6-60PS | N-channel 60V 4.6m standard level MOSFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |