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PDF PSMN016-100PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN016-100PS | |
| Descripción | N-channel 100V 16 m standard level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN016-100PS
www.DataSheet4U.com
N-channel 100V 16 mΩ standard level MOSFET in TO220
Rev. 01 — 1 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tj = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 60 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
VDS = 50 V; see Figure 14
and 15
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 100 V
- - 96 A
- - 148 W
-55 -
175 °C
- - 101 mJ
- 15 - nC
- 49 - nC
- - 28.8 mΩ
- 13 16 mΩ
1 page  
NXP Semiconductors
www.DataSheet4U.com
PSMN016-100PS
N-channel 100V 16 mΩ standard level MOSFET in TO220
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting base see Figure 4
Min Typ Max Unit
- 0.49 1.01 K/W
10
Zth(j-mb)
(K/W)
1
d = 0.5
10−1
0.2
0.1
0.05
0.02
10−2
single shot
001aal314
10−3
10−6
10−5
10−4
10−3
10−2
10−1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
1
PSMN016-100PS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
www.DataSheet4U.com
PSMN016-100PS
N-channel 100V 16 mΩ standard level MOSFET in TO220
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1(1)
b1(2)
L (3×)
b2(2)
(2×)
L2(1)
1 23
ee
b(3×)
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
Fig 18. Package outline SOT78 (TO-220AB)
ISSUE DATE
08-04-23
08-06-13
PSMN016-100PS_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 1 March 2010
© NXP B.V. 2010. All rights reserved.
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