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PDF APT44GA60BD30C Data sheet ( Hoja de datos )
| Número de pieza | APT44GA60BD30C | |
| Descripción | High Speed PT IGBT | |
| Fabricantes | Micrel Semiconductor | |
| Logotipo |  |
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APT44GA60BD30C
APT44GwAww6.D0atSaShDeet34U0.coCm
600V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is
achieved through leading technology silicon design and lifetime control processes. A
reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-
nologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and
capacitance of the poly-silicone gate structure help control di/dt during switching, resulting
in low EMI, even when switching at high frequency. This device has a lower VCE(on) than a
combi (IGBT and Diode)
TO-247
APT44GA60SD30C
D3PAK
APT44GA60BD30C
FEATURES
• Fast switching with low EMI
• Very Low Eoff for maximum efficiency
• Ultra low Cres for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol Parameter
Vces
IC1
IC2
ICM
VGE
PD
SSOA
TJ, TSTG
TL
Collector Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Gate-Emitter Voltage 2
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Ratings
600
78
44
130
±30
337
130A @ 600V
-55 to 150
300
Unit
V
A
V
W
°C
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min Typ Max Unit
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
VGE = 15V,
TJ = 25°C
IC = 26A
TJ = 125°C
VGE =VCE , IC = 1mA
VCE = 600V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
600
3
1.5 1.6 V
1.9
4.5 6
275
3000
μA
±100
nA
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10000
1000
Cies
100
Coes
Cres
10
0 100 200 300 400 500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
APT44GA60B_SD30C
www.DataSheet4U.com
1000
100
10
1
0.1
1 10 100 800
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.40
0.35
D = 0.9
0.30
0.25
0.7
0.20
0.5
Note:
0.15
0.3
t1
0.10
t2
0.05
0
0.1
0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT44GA60BD30C.PDF ] | |
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