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PDF IXFN80N50Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN80N50Q2 | |
| Descripción | HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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Advance Technical Information
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HiPerFETTM
Power MOSFET
IXFN 80N50Q2
N-Channel Enhancement Mode
Avalanche Rated, Low
High dV/dt, Low trr
Qg,
Low
Intrinsic
Rg
VDSS = 500 V
ID25 = 80 A
RDS(on)= 60 mΩ
trr ≤ 250 ns
Symbol
VVDDGSRS
VVGGSSM
ID25
IIADRM
EEAARS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TTCC
= 25°C
= 25°C
ITSJ
≤
≤
I1D5M0, °dCi/d, tR≤G
100
=2
A/µs,
Ω
VDD
≤
VDSS
TC = 25°C
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Maximum Ratings
500 V
500 V
±30 V
±40 V
80 A
320 A
80 A
60 mJ
5.0 J
20 V/ns
890 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
V
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Test Conditions
V = 0 V, I = 1mA
GS D
V = V ,I = 8mA
DS G S D
VGS = ±30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VNGoSt=e
10
1
V,
ID
=
0.5
•
ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
100 µA
5 mA
60 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Pulse generators
Advantages
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS99031A(06/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFN80N50Q2.PDF ] | |
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