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PDF PDTC113ET Data sheet ( Hoja de datos )
| Número de pieza | PDTC113ET | |
| Descripción | NPN resistor-equipped transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PDTC113ET
NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 8 April 2004
Objective data sheet
1. Product profile
1.1 General description
NPN resistor-equipped transistors. PNP complement: PDTA113ET.
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s Reduces component count
s Reduces pick and place costs.
1.3 Applications
s General purpose switching and
amplification
s Inverter and interface circuits
s Circuit driver.
1.4 Quick reference data
Table 1:
Symbol
VCEO
IO
R1
R2
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor
bias resistor
Conditions
Min Typ Max Unit
- - 50 V
- - 100 mA
- 1 - kΩ
- 1 - kΩ
2. Pinning information
Table 2:
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
Simplified outline Symbol
3
1
Top view
2
R1
1
3
R2
2
sym007
1 page  
Philips Semiconductors
www.DataSheet4U.com
PDTC113ET
NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ
9. Revision history
Table 8: Revision history
Document ID
Release date Data sheet status Change notice Order number Supersedes
PDTC113ET_2
Modifications:
PDTC113ET_1
20040408 Objective specification -
9397 750 13066
• Table 5: changed IO and ICM minimum values to maximum values.
20040316 Objective specification -
9397 750 12552
PDTC113ET_1
-
9397 750 13066
Objective data sheet
Rev. 02 — 8 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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