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PDF APT17N80CC3 Data sheet ( Hoja de datos )
| Número de pieza | APT17N80CC3 | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT17N80CC3www.DataSheet4U.com
800V 11.5A 0.320Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
TO-254
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Hermetic TO-254 Package
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT17N80CC3
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800 Volts
11.5
Amps
34.5
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
104
0.83
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 11.5A, TJ = 125°C)
Repetitive Avalanche Current 6
Repetitive Avalanche Energy 6
Single Pulse Avalanche Energy 4
-55 to 150
260
50
17
0.5
670
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 11A)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
800
0.28 0.32
0.5 25
250
±100
2.10 3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet APT17N80CC3.PDF ] | |
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