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PDF IXGR50N60B2 Data sheet ( Hoja de datos )
| Número de pieza | IXGR50N60B2 | |
| Descripción | HiPerFAST IGBT ISOPLUS247 | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IXGR50N60B2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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HiPerFASTTM IGBT
ISOPLUS247TM
IXGR 50N60B2
IXGR 50N60B2D1
B2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
VCES
IC25
VCE(sat)
tfi(typ)
Preliminary Data Sheet
= 600 Vwww.DataSheet4U.com
= 68 A
= 2.2 V
= 65 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ VCE ≤ 600 V
TC = 25°C
50/60 Hz RMS, t = 1m
Weight
5
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXGR_B2 IXGR_B2D1
Maximum Ratings
600 V
600 V
±20 V
±30 V
68 A
36 A
39 A
300 A
ICM = 100
A
200 W
ISOPLUS247
(IXGR)
GCE
(ISOLATED TAB)
G = Gate
C = Collector
E = Emitter
Features
z DCB Isolated mounting tab
z Meets TO-247AD package Outline
z High current handling capability
z Latest generation HDMOSTM process
z MOS Gate turn-on
- drive simplicity
-55 ... +150
150
-55 ... +150
2500
g
300
°C
°C Applications
°C z Uninterruptible power supplies (UPS)
V
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
°C z DC choppers
Advantages
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 40 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
50N60B2
50N60B2D1
50 µA
650 µA
±100 nA
TJ = 125°C
1.8 2.2
1.7
V
V
z Easy assembly
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99144A(05/04)
1 page  
Fig. 13. De pendence of Turn-Off
Sw itching Tim e on Te m perature
350
300
250
td(off)
tfi - - - - - -
RG = 5Ω
VGE = 15V
VCE = 480V
200
150
IC = 80A
IC = 40A
IC = 20A
100
50
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
16
14
12
10
8
6
4
2
0
0
Fig. 15. Gate Charge
VCE = 300V
IC = 40A
IG = 10mA
30 60 90 120
Q G - nanoCoulombs
150
90
80
70
60
50
40
30
20
10
0
100
IXGR 50N60B2
IXGR 50N60B2D1
www.DataSheet4U.com
Fig. 14. Reverse -Bias
Safe Operating Are a
TJ = 125º C
RG = 10Ω
dV/dT < 10V/ns
200 300 400 500 600
V C E - Volts
10000
1000
Fig. 16. Capacitance
f = 1 MHz
Cies
100 Coes
10
0
Cres
5 10 15 20 25 30 35 40
VC E - Volts
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
1
Fig. 17. M axim um T r an s ie n t Th e r m al Re s is tan ce
10
Puls e W idth - millis ec onds
100
1000
© 2004 IXYS All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGR50N60B2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXGR50N60B | HiPerFAST IGBT ISOPLUS247 |  IXYS Corporation |
| IXGR50N60B2 | HiPerFAST IGBT ISOPLUS247 | IXYS |
| IXGR50N60B2D1 | HiPerFAST IGBT ISOPLUS247 | IXYS |
| IXGR50N60BD1 | HiPerFAST IGBT ISOPLUS247 | IXYS Corporation |
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