|
|
PDF IXSH10N60B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXSH10N60B2D1 | |
| Descripción | High Speed IGBT with Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXSH10N60B2D1 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
High Speed IGBT
with Diode
IXSH 10N60B2D1
IXSQ 10N60B2D1
Short Circuit SOA Capability
www.DataSheet4U.com
VCES = 600 V
IC25 = 20 A
VCE(sat) = 2.5 V
Preliminary Data Sheet
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
IF(110)
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
TJM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 82Ω
Clamped inductive load, VGE = 20 V
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 150 Ω, non repetitive
TC = 25°C
Mounting torque
TO-247
TO-3P
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
D1
Maximum Ratings
600
600
± 20
± 30
20
10
11
30
ICM = 20
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
A
µs
100 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.3/10 Nm/lb. in
5g
5g
300 °C
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VVGCEE
=
=
0VVCES
VCE = 0 V, VGE = ± 20 V
IC = 10A, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
4.0 7.0 V
75 µA
200 µA
± 100 nA
2.5 V
TO-247 (IXSH)
GCE
TO-3P (IXSQ)
(TAB)
G
C
E
G = Gate
E = Emitter
(TAB)
C = Collector
TAB = Collector
Features
• International standard package
• Guaranteed Short Circuit SOA
capability
•
Low
- for
VloCwE(soatn) -state
conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Fast fall time for switching speeds
up to 20 kHz
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
© 2004 IXYS All rights reserved
DS99236(10/04)
1 page  
IXSH 10N60B2D1
IXSQ 10wNw6w0.DBata2SDhe1et4U.com
Fig. 13. Depe nde nce of Turn-off
Sw itching Tim e on Tem pe rature
340
320
td(off)
300 tfi - - - - - -
IC = 20A
5A
280 RG = 30Ω
260 VGE = 15V
240 VCE = 480V
220
200 IC = 5A
180 20A
160 IC = 10A
140
120
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
1000
Fig. 15. Capacitance
Cies
100
10
f = 1 MHz
1
0
5 10
15 20 25
VC E - Volts
Coes
Cres
30 35
40
Fig. 14. Gate Charge
16
14 VCE = 300V
I C = 10A
12 I G= 10mA
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18
Q G - nanoCoulombs
Fig. 16. Reve rs e-Bias Safe
Operating Are a
22
20
18
16
14
12
10
8
6 TJ = 125ºC
4 RG = 82Ω
2 dV/dT < 10V/ns
0
100 150 200 250 300 350 400 450 500 550 600
VC E - Volts
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.1
Fig. 17. Maxim um Trans ient The rm al Res istance
1 10
Pulse Width - milliseconds
100
1000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXSH10N60B2D1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXSH10N60B2D1 | High Speed IGBT with Diode | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |