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PDF IXFN50N80Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN50N80Q2 | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFET
IXFN 50N80Q2
N-Channel Enhancement Mode
Avalanche Rated,
High dV /dt, Low trr
Low Qg,
Low
Intrinsic
Rg
www.DataSheet4U.com
VDSS =
ID25 =
RDS(on)=
800 V
50 A
0.15 Ω
trr ≤ 300 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IIADRM
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Maximum Ratings
800 V
800 V
±30 V
±40 V
50 A
200 A
50 A
60 mJ
5.0 J
20 V/ns
890 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
V
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Test Conditions
V = 0 V, I = 1mA
GS D
V = V ,I = 8mA
DS G S D
VGS = ±30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VNGoSt=e
10
1
V,
ID
=
0.5
•
ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
800 V
2.5 5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
50 µA
3 mA
0.15 Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Pulse generators
Advantages
• Easy to mount
• Space savings
• High power density
© 2004 IXYS All rights reserved
DS99028A(09/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN50N80Q2.PDF ] | |
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