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PDF BUK7E04-40A Data sheet ( Hoja de datos )
| Número de pieza | BUK7E04-40A | |
| Descripción | TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK75/76/7E04-40A
TrenchMOS™ standard level FET
Rev. 02 — 7 November 2001
www.DataSheet4U.com
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7504-40A in SOT78 (TO-220AB); BUK7604-40A in SOT404 (D2-PAK);
BUK7E04-40A in SOT226 (I2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb mb mb
3 source (s)
mb mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
123
MBK112
SOT226 (I2-PAK)
Symbol
g
MBB076
d
s
1 page  
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 40 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 10 V; VDD = 32 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
from drain lead 6mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
Ls internal source inductance from source lead to source
bond pad
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
www.DataSheet4U.com
Min Typ Max Unit
40 − − V
36 − − V
234V
1−−V
− − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
− 3.9 4.5 mΩ
− − 8.5 mΩ
− 117 − nC
− 19 − nC
− 50 − nC
−
4300
5730
pF
−
1400
1680
pF
−
800
1100
pF
− 33 − ns
− 110 − ns
− 151 − ns
− 76 − ns
− 4.5 − nH
− 3.5 − nH
− 2.5 − nH
− 7.5 − nH
9397 750 09059
Product data
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5 of 15
5 Page 
Philips Semiconductors
BUK75/76/7E04-40A
TrenchMOS™ standard level FET
www.DataSheet4U.com
Plastic single-ended package; low-profile 3 lead TO-220AB
SOT226
D1 E
D
L2
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c
D D1 E
e
L
L1
L2(1)
max
Q
mm
4.5 1.40 0.9
4.1 1.27 0.7
1.3 0.7
1.0 0.4
9.65
8.65
1.5
1.1
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT226
REFERENCES
IEC
JEDEC
EIAJ
low-profile
3-lead TO-220AB
EUROPEAN
PROJECTION
ISSUE DATE
99-05-27
99-09-13
Fig 18. SOT226 (I2-PAK).
9397 750 09059
Product data
Rev. 02 — 7 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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