PDF PMEM4030PS Data sheet ( Hoja de datos )

Número de pieza	PMEM4030PS
Descripción	PNP transistor/Schottky rectifier module Combination
Fabricantes	NXP Semiconductors
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No Preview Available ! PMEM4030PS www.DataSheet4U.com PNP transistor/Schottky rectiﬁer module Rev. 01 — 28 June 2005 Product data sheet 1. Product proﬁle 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectiﬁer with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package. NPN complement: PMEM4030NS. 1.2 Features s 1 W total power dissipation s High current capability up to 2 A s Reduces Printed-Circuit Board (PCB) area required s Reduces pick and place costs s Small plastic Surface Mounted Device (SMD) package s Transistor x Low collector-emitter saturation voltage s Diode x High-speed switching x Low forward voltage x Guard ring protected 1.3 Applications s DC-to-DC converters s Inductive load drivers s General-purpose load drivers 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter PNP transistor VCEO collector-emitter voltage IC collector current Schottky barrier rectiﬁer VR reverse voltage IF forward current Conditions open base continuous Min Typ Max Unit - - −50 V - - −2 A - - 40 V - - 1A 1 page Philips Semiconductors PMEM4030PS www.DataSheet4U.com PNP transistor/Schottky rectiﬁer module 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter Conditions Min PNP transistor ICBO IEBO collector-base cut-off current emitter-base cut-off current VCB = −50 V; IE = 0 A VCB = −50 V; IE = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A - - - hFE VCEsat RCEsat DC current gain collector-emitter saturation voltage collector-emitter saturation resistance VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCE = −2 V; IC = −1 A VCE = −2 V; IC = −2 A VCE = −2 V; IC = −3 A IC = −500 mA; IB = −50 mA IC = −1 A; IB = −50 mA IC = −2 A; IB = −100 mA IC = −2 A; IB = −200 mA IC = −3 A; IB = −300 mA IC = −2 A; IB = −200 mA 200 200 [1] 200 [1] 130 [1] 80 - - [1] - [1] - [1] - [1] - VBEsat VBEon base-emitter saturation voltage base-emitter turn-on voltage IC = −2 A; IB = −100 mA IC = −3 A; IB = −300 mA VCE = −2 V; IC = −1 A [1] - [1] - [1] −1.0 fT transition frequency VCE = −5 V; IC = −100 mA; 100 f = 100 MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; - f = 1 MHz Schottky barrier rectiﬁer VF forward voltage IF = 100 mA [1] - IF = 1 A [1] - IR reverse current VR = 10 V [1] - VR = 40 V [1] - Cd diode capacitance VR = 4 V; f = 1 MHz; - [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Typ - - - - - - - - - - - - - 90 - - - - - 280 460 15 60 65 Max Unit −100 nA −50 µA −100 nA - - 450 - - −90 −180 −320 −270 −390 135 mV mV mV mV mV mΩ −1.1 V −1.2 V -V - MHz 35 pF 330 mV 500 mV 40 µA 300 µA 80 pF 9397 750 15064 Product data sheet Rev. 01 — 28 June 2005 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 5 of 14 5 Page Philips Semiconductors PMEM4030PS www.DataSheet4U.com PNP transistor/Schottky rectiﬁer module 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description PMEM4030PS SOT96-1 8 mm pitch, 12 mm tape and reel [1] For further information and the availability of packing methods, see Section 16. Packing quantity 1000 2500 -115 -118 9397 750 15064 Product data sheet Rev. 01 — 28 June 2005 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 11 of 14 11 Page

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