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Número de pieza | PDTB123E | |
Descripción | 50 V resistor-equipped transistors | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 April 2005
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1: Product overview
Type number
Package
Philips
PDTB123EK
SOT346
PDTB123ES [1]
SOT54
PDTB123ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTD123EK
PDTD123ES
PDTD123ET
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s 500 mA output current capability
s Reduces component count
s Reduces pick and place costs
s ±10 % resistor ratio tolerance
1.3 Applications
s Digital application in automotive and
industrial segments
s Controlling IC inputs
s Cost-saving alternative for BC807 series
in digital applications
s Switching loads
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ
--
--
1.54 2.2
0.9 1.0
Max
−50
−500
2.86
1.1
Unit
V
mA
kΩ
1 page Philips Semiconductors
PDTB123E series
www.DataSheet4U.com
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
103
hFE
102
006aaa353
(1)
(2)
(3)
10
1
10−1
−10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10 006aaa355
VI(on)
(V)
−1
(1)
(2)
(3)
−10−1
VCEsat
(V)
006aaa354
(1)
(2)
(3)
−10−2
−1
−10 −102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−10 006aaa356
VI(off)
(V)
−1
(1)
(2)
(3)
−10−1
−10−1
−1
−10
−102
−103
IC (mA)
−10−1
−10−1
−1 −10
IC (mA)
VCE = −0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of collector
current; typical values
9397 750 14904
Product data sheet
Rev. 01 — 27 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PDTB123E.PDF ] |
Número de pieza | Descripción | Fabricantes |
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