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PDF IXFK64N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFK64N60P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 64N60P
IXFX 64N60P
VDSS
ID25
RDS(on)
trr
= 600 Vwww.DataSheet4U.com
= 64 A
≤ 96 mΩ
≤ 200 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
FC
Md
Weight
Test Conditions
Maximum Ratings TO-264 AA (IXFK)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
600 V
600 V
±30 V
±40 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
64 A
150 A
64 A
80 mJ
3.5 J
20 V/ns
1040
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
Mounting force (PLUS247)
20..120/4.5..25
°C
N/lb
Mounting torque (TO-264)
1.13/10 Nm/lb.in.
TO-264
PLUS247
10 g
6g
G
D
S
PLUS247 (IXFX)
(TAB)
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
±200 nA
25 µA
1000 µA
96 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99442(09/05)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK64N60P.PDF ] | |
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