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PDF IXFL38N100Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFL38N100Q2 | |
| Descripción | HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
IXFL 38N100Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
IXFL 38N100Q2
VDSS
= 1000 Vwww.DataSheet4U.com
ID25 = 22 A
RDS(on) = 0.28 Ω
t
rr
≤ 300 ns
Symbol
VVDDGSSR
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TTJJM
Tstg
TL
VISOL
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
1000
1000
± 30
± 40
V
V
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
22
152
38
TC = 25°C
TC = 25°C
60
5.0
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, VGS = 0 V
TJ ≤ 150°C, RG = 2 Ω
20
TC = 25°C
380
-55 ... +150
150
-55 ... +150
A
A
A
mJ
J
V/ns
W
°C
°C
°C
1.6 mm (0.063 in.) from case for 10 s
300 °C
50/60 Hz, RMS
IISOL ≤ 1 mA
Mounting force
t = 1 min
t=1s
2500
3000
V~
V~
9-27/40-120 lbs / N
8g
Symbol
Test Conditions
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ± 30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT, Note 1
Characteristic Values
(TJ
=
25°C
unless
min.
otherwise specified)
typ. max
1000
V
2.5 5.0 V
± 200 nA
TJ = 25°C
TJ = 125°C
100 μA
5 μA
0.28 Ω
© 2005 IXYS All rights reserved
ISOPLUS264TM
G
C
E
Isolated Back Surface
Features
Electrically isolated mounting tab
Double metal process for low gate
resistance
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generation
Laser drivers
Advantages
2500 V~ Electrical isolation
ISOPLUS 264TM package for clip or
spring mounting
Space savings
High power density
DS99512(11/05)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFL38N100Q2.PDF ] | |
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