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PDF IXFR140N20P Data sheet ( Hoja de datos )
| Número de pieza | IXFR140N20P | |
| Descripción | PolarHT HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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Advance Technical Information
PolarHTTM HiPerFET IXFR 140N20P
Power MOSFET
ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated; Fast Intrinsic Diode
V = 200 VDSS
www.DataSheet4U.com
ID25
RDS(on)
=
=
75 A
22 mΩ
trr ≤ 150 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDRMS
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
Maximum Ratings
200 V
200 V
± 20 V
± 30 V
75 A
75 A
280 A
60 A
100 mJ
4J
10 V/ns
300
-55 ... +175
175
-55 ... +150
300
2500
20..120/4.5..20
5
W
°C
°C
°C
°C
V~
N/lb.
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 4 mA
2.5 5.0 V
IGSS VGS = ± 20 VDC, VDS = 0
± 200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 μA
250 μA
RDS(on)
VGS = 10 V, ID = 70 A
VGS = 15 V, ID = 140A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
22 mΩ
17 mΩ
ISOPLUS247 (IXFR)
E153432
G
DS
ISOLATED TAB
G = Gate
S = Source
D = Drain
Features
z International standard isolated
package
z UL recognized package
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99298D(11/05)
1 page  
IXFR 140N20P
www.DataSheet4U.com
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
1
10 100
Pulse Width - milliseconds
1000
© 2005 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFR140N20P.PDF ] | |
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