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PDF AT35700 Data sheet ( Hoja de datos )

Número de pieza AT35700
Descripción 40.0V HV CMOS Foundry Technology
Fabricantes ATMEL Corporation 
Logotipo ATMEL Corporation Logotipo



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Standard Features
5.0V low-leakage CMOS transistors
17V and 40V high-voltage LDMOS transistors
High-density, double-poly memory cell
Isolated NMOS and LDMOS transistors
Analog Resistors
Dual Poly Capacitor
Mono-silicon capacitors
3 layer metal
Isolated and folded bond pads
Applications
Power management integrated circuits
wwwH.DigahtapSehrefoert4mUa.cnocme mixed-signal with embedded memory
Motor/motion control
Automotive monitor and control circuitry
Description
Atmel’s AT35700, 0.35um, high-voltage CMOS foundry technology process was
developed for mixed-signal and power management applications. The technology has
LDMOS transistors capable of 17V and 40V operation and has 5.0V low-leakage
CMOS transistors. The low-leakage CMOS has been engineered to minimize sub-
threshold leakage currents making this technology ideal for portable electronic
devices. Isolated NMOS and LDMOS transistors are included to minimize circuit
noise. A large selection of on-chip analog resistors and capacitors are included to
reduce off-chip component requirements. The technology supports placement of ESD
and I/O transistors under the bond pads, thus minimizing the die size.
Included is Atmel’s reliable double-poly, high-density memory cell. The cell can be
used to create parallel EEPROM, serial EEPROM or Pseudo FLASH memory
designs. Having embedded EEPROM provides large data storage capability as
required in monitor and control applications and eliminates the need for additional
memory chips.
0.35um, 40.0V
HV CMOS
Foundry
Technology
AT35700
Preliminary
5166A–HVCMOS–5/06

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