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PDF APT31N80JC3 Data sheet ( Hoja de datos )
| Número de pieza | APT31N80JC3 | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APT31N80JC3
800V 31A 0.145Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Ultra Low Gate Charge, Qg
• Popular SOT-227 Package
• Low Miller Capacitance
• Avalanche Energy Rated
• N-Channel Enhancement Mode
www.DUantleasSshsetaetetd4Uot.hceorwmise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
SS
G D SOT-227
ISOTOP®
"UL Recognized"
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT31N80JC3
UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800 Volts
31
Amps
93
±20 Volts
±30
PD
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
833
6.67
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 31A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
300
50
17
0.5
670
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 22A)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2mA)
MIN
800
2.10
TYP
0.125
0.5
3
MAX
0.145
25
250
±200
3.9
UNIT
Volts
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
1 page  
Typical Performance Curves
10 %
t
d(on)
90%
t
r
5 % 10 %
Switching Energy
Gate Voltage
TJ = 125 C
Drain Current
5%
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
www.DataSheet4U.com
APT15DF100
VDD
IC VCE
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT31N80JC3
90%
td(off)
tf
90%
Gate Voltage
Drain Voltage
10%
0 Drain Current
TJ = 125 C
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP®is a Registered Trademark of SGS Thomson. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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