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PDF APT30M61SFLL Data sheet ( Hoja de datos )

Número de pieza APT30M61SFLL
Descripción POWER MOS 7 FREDFET
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! APT30M61SFLL Hoja de datos, Descripción, Manual

APT30M61BFLL
APT30M61SFLL
300V 54A 0.061
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses
and Q
are addressed
. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
D3PAK
• Lower Input Capacitance
www.DaLtaoShweeert4MU.cilolemr Capacitance
• Increased Power Dissipation
• Easier To Drive
D
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
FAST RECOVERY BODY DIODE
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT30M61BFLL-SFLL UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
300 Volts
54
Amps
216
±30
Volts
±40
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
403
3.23
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
54
30
1300
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 27A)
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
300
3
Volts
0.061 Ohms
250
1000
µA
±100 nA
5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

1 page




APT30M61SFLL pdf
Typical Performance Curves
10 %
t
d(on)
t
r
90 %
5%
5%
10 %
Switching Energy
Gate Voltage
TJ = 125 C
Drain Current
Drain Voltage
Figure 18, Turn-on Switching Waveforms and Definitions
www.DataSheet4U.com
APT30DS30
VDD
IC VCE
D.U.T.
G
Figure 20, Inductive Switching Test Circuit
APT30M61BFLL - SFLL
90%
td(off)
90%
tf
Switching Energy
10%
0
Gate Voltage
TJ = 125 C
Drain Voltage
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated

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