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PDF APT51F50J Data sheet ( Hoja de datos )

Número de pieza APT51F50J
Descripción N-Channel FREDFET
Fabricantes Microsemi 
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No Preview Available ! APT51F50J Hoja de datos, Descripción, Manual

APT51F50J
500V, 51A, 0.075Max, trr 310ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
SS
G D SOT-227
ISOTOP®
"UL Recognized"
file # E145592
APT51F50J
Single die FREDFET G
D
S
www.DataSheet4U.com
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
RθCS
TJ,TSTG
VIsolation
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
Ratings
Unit
51
32
A
230
±30
V
1580
mJ
37
A
Min Typ Max Unit
480 W
0.26
°C/W
0.15
-55
150 °C
2500
V
1.03
29.2
oz
g
10 in·lbf
1.1 N·m
MicrosemiWebsite-http://www.microsemi.com

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