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PDF HMD4M32M2EG Data sheet ( Hoja de datos )
| Número de pieza | HMD4M32M2EG | |
| Descripción | 16Mbyte(4Mx32) 72-pin SIMM EDO Mode | |
| Fabricantes | Hanbit Electronics | |
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HANBit
HMD4M32M2EG
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
Part No. HMD4M32M2E, HMD4M32M2EG
GENERAL DESCRIPTION
The HMD4M32M2E is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of two CMOS 4M
x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin. A 0.1 or 0.22uF decoupling capacitor is mounted on the
printed circuit board for each DRAM components. The module is a single In-line memory module with edge connections
and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single
5V DC power supply. All inputs and outputs are TTL-compatible.
www.DataShFeEetA4UT.cUoRmES
w Part Identification
HMD4M32M2E----4K Cycles/64ms Ref. Solder
HMD4M32M2EG- 4K Cycles/64ms Ref. Gold
w Access times : 50, 60ns
w High-density 16MByte design
w Single +5V± 0.5V power supply
wJEDEC standard pinout
w EDO Mode operation
w TTL compatible inputs and outputs
w FR4-PCB design
OPTIONS
MARKING
w Timing
50ns access
60ns access
w Packages
72-pin SIMM
-5
-6
M
PRESENCE DETECT PINS
Pin
50ns
60ns
PD1 Vss Vss
PD2
NC
NC
PD3
Vss
NC
PD4
Vss
NC
PERFORMANCE RANGE
Speed
tRAC
tCAC
5
50ns
13ns
6 60ns
URL:www.hbe.co.kr
REV.1.0 (August.2002)
15ns
tRC
90ns
110ns
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 25 DQ22 49 DQ8
2
DQ0
26
DQ7
50 DQ24
3 DQ16 27 DQ23 51
DQ9
4
DQ1
28
A7
52 DQ25
5 DQ17 29 A11 53 DQ10
6
DQ2
30
Vcc
54 DQ26
7 DQ18 31 A8 55 DQ11
8
DQ3
32
A9
56 DQ27
9 DQ19 33 NC 57 DQ12
10 Vcc 34 NC 58 DQ28
11 NC 35 NC 59 Vcc
12 A0 36 NC 60 DQ29
13 A1 37 NC 61 DQ13
14 A2 38 NC 62 DQ30
15 A3 39 Vss 63 DQ14
16 A4 40 /CAS0 64 DQ31
17 A5 41 /CAS2 65 DQ15
18 A6 42 /CAS3 66 NC
19 A10 43 /CAS1 67 PD1
20 DQ4 44 /RAS0 68
PD2
21 DQ20 45 NC 69 PD3
22 DQ5 46 NC 70 PD4
23 DQ21 47
/WE
71
NC
24 DQ6 48 NC 72 Vss
tHPC
26ns
30ns
1
HANBit Electronics Co.,Ltd.
1 page  
HANBit
HMD4M32M2EG
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
8
10
ns
Column address hold referenced to /RAS
tAR 40
45
ns
Column Address to /RAS lead time
tRAL 25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to /CAS
tRCH
0
0
ns
Read command hold referenced to /RAS
tRRH
0
0
ns
Write command hold time
www.DataSheWetr4itUe.ccoommmand hold referenced to /RAS
tWCH
tWCR
10
40
10
45
ns
ns
Write command pulse width
tWP 10
10
ns
Write command to /RAS lead time
tRWL
13
15
ns
Write command to /CAS lead time
tCWL
8
10
ns
Data-in set-up time
tDS 0
0
ns
Data-in hold time
tDH 8
10
ns
Data-in hold referenced to /RAS
tDHR
40
45
ns
Refresh period
tREF 64 64 ns
Write command set-up time
tWCS
0
0
ns
/CAS to /W delay time
tCWD
36
40
ns
/RAS to /W delay time
tRWD
73
85
ns
/CAS precharge(C-B-R counter test)
tCPT 20
20
ns
Column address to /W delay time
tAWD
48
55
ns
Access time from /CAS precharge
tCPA 30 35 ns
/CAS precharge time (Hyper Page cycle)
tCP 8
10
ns
/RAS pulse width (Hyper Page cycle)
tRASP
50
200K 60
200K
ns
/W to /RAS precharge time (C-B-R refresh)
tWRP
10
10
ns
/W to /RAS hold time (C-B-R refresh)
tWRH
10
10
ns
NOTES
1.An initial pause of 200µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
3.Measured with a load equivalent to 1TTL loads and 100pF
4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
5.Assumes that tRCD ≥ tRCD(max)
6. tAR, tWCR, tDHR are referenced to tRAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH
URL:www.hbe.co.kr
REV.1.0 (August.2002)
5 HANBit Electronics Co.,Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMD4M32M2EG.PDF ] | |
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