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PDF AO4932 Data sheet ( Hoja de datos )
| Número de pieza | AO4932 | |
| Descripción | Asymmetric Dual N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4932
Asymmetric Dual N-Channel MOSFET
SRFET TM
General Description
Product Summary
The AO4932 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
FET1(N-Channel)
VDS= 30V
ID= 11A (VGS=10V)
RDS(ON)
< 12.5mΩ (VGS=10V)
< 15mΩ (VGS=4.5V)
FET2(N-Channel)
30V
8A (VGS=10V)
RDS(ON)
< 19mΩ (VGS=10V)
< 23mΩ (VGS=4.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
Top View
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D1
D2 G2
D2 S2/D1
G1 S2/D1
S1 S2/D1
G1 G2
Pin1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FE1
Max FET2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
VGS ±12
±20
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
11
9
60
15
11
8
6.5
40
19
18
TA=25°C
Power Dissipation B TA=70°C
22
PD 1.3 1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Nov 2011
www.aosmd.com
Page 1 of 9
1 page  
AO4932
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-01
1.E-02
1.E-03
1.E-04
VDS=30V
VDS=15V
1.E-05
0 50 100 150 200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
12
di/dt=800A/µs
10
125ºC
12
10
88
6 Qrr
25ºC
6
4
Irm
2
125ºC
25ºC
4
2
00
0 5 10 15 20 25 30
IS (A)
Figure 14: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
10
Is=20A
8
125ºC
10
8
6 Qrr
25ºC
6
44
125ºC
2
Irm
25ºC
2
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
0.9
0.8
20A
10A
0.7
0.6
0.5
0.4 5A
0.3
0.2 IS=1A
0.1
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
8
di/dt=800A/µs
6
4 trr
125ºC
25ºC
3
2.5
2
1.5
2S
125ºC
25ºC
1
0.5
00
0 5 10 15 20 25 30
IS (A)
Figure 15: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
12 3
10
40
8
125ºC
Is=20A
2.5
2
25ºC
6
trr 1.5
4
125ºC
S1
2
25ºC
0.5
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 17: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 4: Nov. 2011
www.aosmd.com
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AO4932.PDF ] | |
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