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PDF AO4914 Data sheet ( Hoja de datos )
| Número de pieza | AO4914 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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Rev 6: May 2005
AO4914
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4914 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
AO4914 is Pb-free (meets ROHS & Sony 259
www.DastpaeShciefiecat4tiUo.ncso)m. AO4914L is a Green Product ordering
option. AO4914 and AO4914L are electrically identical.
Features
Q1
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 18mΩ
RDS(ON) < 28mΩ
Q2
VDS(V) = 30V
ID = 8.5A
<18mΩ (VGS = 10V)
<28mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
S2/A 1 8 D2/K
G2 2 7 D2/K
S1 3 6 D1
G1 4 5 D1
SOIC-8
Q1
G2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
D2
K
A
G1
S2
D1 Q2
S1
Max Q1
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Max Q2
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Diode Forward Current B
Power Dissipation A
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
IF
IFM
PD
TJ, TSTG
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4914, AO4914L
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
8 ID=8.5A
6
4
2
0
www.DataShe0et4U.com 4
8 12 16
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
1500
1250
1000
Ciss
750
500
Coss FET+SCHOTTKY
250
0 Crss
05
10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
RDS(ON)
limited
10.0
1ms
10ms
100µs 10µs
50
40
30
TJ(Max)=150°C
TA=25°C
1.0
0.1
0.1
TJ(Max)=150°C
TA=25°C
1
0.1s
1s
10s
DC
10
20
10
0
100
0.001 0.01
0.1
1
10 100 1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
40
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
PD
Ton T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AO4914.PDF ] | |
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