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PDF SIM200D12SV3 Data sheet ( Hoja de datos )
| Número de pieza | SIM200D12SV3 | |
| Descripción | HALF-BRIDGE IGBT MODULE | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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Preliminary
SIM200D12SV3
“HALF-BRIDGE” IGBT MODULE
Features
Applications
▪ rench gate + field stopper, using ▪ AC & DC Motor controls
Infineon chip design
▪ VVVF inverters
▪ 10µs Short circuit capability
▪ Optimized for high frequency inverter
▪ Low turn-off losses
Type Welding machines
▪ Short tail current for over 18KHz
▪ SMPS
Package : V3
▪ Positive VCE(on)
▪ UPS, Robotics
www.DatetamSpheereattu4rUe.ccooemfficient
Absolute Maximum Ratings @ Tj=25
(per leg)
VCES = 1200V
Ic = 200A
VCE(ON) typ. = 1.7V
@ Ic = 200A
Symbol
Parameter
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
Condition
VGE = 0V, IC = 1.0mA
TC = 80
TC = 25
TC = 80
Tc=
AC 1 minute
Ratings
1200
± 20
200(260)
400
200(260)
400
10
2500
-40 ~ 150
-40 ~ 125
360
3.5
3.5
Unit
V
V
A
A
A
A
µs
V
g
Nm
Nm
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
-
-
VGE = 0V, IC = 1.0mA
VCE(ON)
Collector-to-Emitter Saturation Voltage
1.4
1.7 2.15
V IC = 200A, VGE = 15V
VGE(th)
Gate Threshold Voltage
5.0 5.8 6.5
VCE = VGE, IC = 500µA
ICES Zero Gate Voltage Collector Current
- - 1.0 mA VGE = 0V, VCE = 1200V
IGES Gate-to-Emitter Leakage Current
-
-
± 200
nA VCE = 0V, VGE = ± 20V
1 page  
Preliminary
SIM200D12SV3
www.DataSheet4U.com
Fig 9. Typ. Capacitance vs. VCE
VGE = 0V; f = 1Mhz
Fig 10. Typical Gate Charge vs. VGE
ICE = 120A; L = 600µH
Fig 11. Typ. Switching Time vs. IC
TJ = 125 ; L = 200µH; VCE = 600V
RG = 3.9Ω; VGE = 15V
Fig 12. Typ. Switching Time vs. RG
TJ = 125 ; L = 200µH; VCE = 600V
ICE = 200A; VGE = 15V
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIM200D12SV3.PDF ] | |
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