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PDF SIM200D06AV2 Data sheet ( Hoja de datos )
| Número de pieza | SIM200D06AV2 | |
| Descripción | IGBT | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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Preliminary
SIM200D06AV2
“HALF-BRIDGE” IGBT
Feature
▪
design technology
▪ Low VCE (sat)
▪ Low Turn-off losses
▪ Short tail current for over 20KHz
Applications
▪ Motor controls
▪ VVVF inverters
▪ Inverter-type welding MC over 18KHZ
▪ SMPS, Electrolysis
▪ UPS/EPS, Robotics
www.DataSAhebest4oUl.ucotme Maximum Ratings @ Tj=25 (Per Leg)
PKG: V2=48mm
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
TC =
VGE Gate emitter voltage
IC Continuous Collector Current
TC = 80
ICP Pulsed collector current
TC =
IF Diode Continuous Forward Current
TC = 80
IFM Diode Maximum Forward Current
TC =
tp Short circuit test, VGE = 15V, VCC = 360V
TC = 150 25
Viso Isolation Voltage test
AC @ 1 minute
Weight Weight of Module
Tj Junction Temperature
Tstg Storage Temperature
Md Mounting torque with screw : M5
Terminal connection torque : M5
VCES = 600V
Ic= 200A
VCE(ON) typ. = 1.6V
@Ic= 200A
Ratings
600
20
200 (290)
450
200 (290)
400
6 (8)
2500
190
-40 ~ 150
-40 ~ 125
2.0
2.0
Unit
V
V
A
A
A
A
V
g
N.m
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
VCE(ON)
VGE(th)
ICES
IGES
VF
RGINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Forward voltage drop
Integrated gate resistor
Min
Typ
1.60
5.8
1.6
2
Max Unit
Test conditions
1.95
6.5
5.0
400
1.9
IC = 200A, VGE = 15V
V
VCE = VGE, IC = 4
VGE= 0V, VCE = 600V
VCE = 0V, VGE = V
IF = 200A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SIM200D06AV2.PDF ] | |
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