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PDF ALD110902 Data sheet ( Hoja de datos )
| Número de pieza | ALD110902 | |
| Descripción | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY | |
| Fabricantes | Advanced Linear Devices | |
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Hay una vista previa y un enlace de descarga de ALD110902 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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ADVANCED
LINEAR
DEVICES, INC.
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EPAD
ENA
®
B
L
E
D
ALD110802/ALD110902
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
MATCHED PAIR MOSFET ARRAY
VGS(th)= +0.2V
GENERAL DESCRIPTION
ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS
matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110802/ALD110902 MOSFETS are designed and built for ex-
ceptional device electrical characteristics matching. Since these devices
are on the same monolithic chip, they also exhibit excellent tempco tracking
characteristics. They are versatile circuit elements useful as design com-
ponents for a broad range of analog applications, such as basic building
blocks for current sources, differential amplifier input stages, transmis-
sion gates, and multiplexer applications. For most applications, connect
V- and N/C pins to the most negative voltage potential in the system and
V+ pin to the most positive voltage potential (or left open unused). All
other pins must have voltages within these voltage limits.
The ALD110802/ALD110902 devices are built for minimum offset voltage
and differential thermal response, and they are suited for switching and
amplifying applications in <+0.1V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired, as
these devices exhibit well controlled turn-off and sub-threshold charac-
teristics and can be biased and operated in the sub-threshold region.
Since these are MOSFET devices, they feature very large (almost infi-
nite) current gain in a low frequency, or near DC, operating environment.
The ALD110802/ALD110902 are suitable for use in very low operating
voltage or very low power (nanowatt), precision applications which re-
quire very high current gain, beta, such as current mirrors and current
sources. The high input impedance and the high DC current gain of the
Field Effect Transistors result from extremely low current loss through
the control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example,
DC beta of the device at a drain current of 3mA and input leakage current
of 30pA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.2V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) to 10mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
Plastic Dip
Package
16-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
8Pin
SOIC
Package
ALD110802PC ALD110802SC ALD110902PA ALD110902SA
APPLICATIONS
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage(<0.2V) circuits
• Sub-threshold biased and operated circuits
• Precision current mirrors and current sources
• Nano-Amp current sources
• High impedance resistor simulators
• Capacitive probes and sensor interfaces
• Differential amplifier input stages
• Discrete Voltage comparators and level shifters
• Voltage bias circuits
• Sample and Hold circuits
• Analog and digital inverters
• Charge detectors and charge integrators
• Source followers and High Impedance buffers
• Current multipliers
• Discrete Analog switches / multiplexers
PIN CONFIGURATION
ALD110802
N/C*
GN1
DN1
S12
V-
DN4
GN4
N/C*
V-
1
V-
16
2 15
3 M 1 M 2 14
4 V+ 13
5 V-
12
6 M4 M3
7
11
10
8 V-
V- 9
PC, SC PACKAGES
N/C*
GN2
DN2
V+
S34
DN3
GN3
N/C*
ALD110902
V-
N/C* 1
V-
8 N/C*
GN1
DN1
S12
2
3
4
M1 M2
V-
7 GN2
6 DN2
5 V-
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ALD110902.PDF ] | |
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