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PDF IS61C3216AL Data sheet ( Hoja de datos )
| Número de pieza | IS61C3216AL | |
| Descripción | HIGH-SPEED CMOS STATIC RAM | |
| Fabricantes | Integrated Silicon Solution | |
| Logotipo |  |
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IS61C3216AL
32K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI®
www.DataSheet4U.com
SEPTEMBER 2005
FEATURES
• High-speed access time: 12 ns
• Low Active Power: 175 mW (typical)
• Low Standby Power: 1 mW (typical)
CMOS standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Available in 44-pin SOJ package and
44-pin TSOP (Type II)
• Commercial and Industrial temperature ranges
available
• Lead-free available
DESCRIPTION
The ISSI IS61C3216AL is high-speed, 512Kb static RAMs
organized as 32,768 words by 16 bits. They are fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C3216AL is packaged in the JEDEC standard 44-
pin 400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE CONTROL
WE CIRCUIT
UB
LB
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
09/26/05
1
1 page  
IS61C3216AL
ISSI ®
www.DataSheet4U.com
IS61C3216AL
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
ICC1 VDD Operating
Supply Current
Test Conditions
VDD = VDD MAX., CE = VIL
IOUT = 0 mA, f = 0
Com.
Ind.
-12 ns
Min. Max.
— 40
— 45
ICC2 VDD Dynamic Operating VDD = VDD MAX., CE = VIL
Supply Current
IOUT = 0 mA, f = fMAX
ISB1 TTL Standby Current
(TTL Inputs)
VDD = VDD MAX.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com.
Ind.
typ.(2)
Com.
Ind.
— 50
— 55
35
—1
—1
Unit
mA
mA
mA
ISB2 CMOS Standby
VDD = VDD MAX.,
Current (CMOS Inputs) CE ≤ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
typ.(2)
— 350
— 400
200
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5V, TA = 25oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
09/26/05
5
5 Page 
IS61C3216AL
WRITE CYCLE NO. 4 (UB/LB Back to Back Write)
ADDRESS
t WC
ADDRESS 1
t WC
ADDRESS 2
ISSI ®
www.DataSheet4U.com
OE
CE LOW
t SA
WE
UB, LB
DOUT
DIN
t PBW
t HZWE
DATA UNDEFINED
WORD 1
HIGH-Z
t SD
DATAIN
VALID
t HA
t SA
t PBW
WORD 2
t HA
t LZWE
t HD
t SD
DATAIN
VALID
t HD
UB_CEWR4.eps
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
09/26/05
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IS61C3216AL.PDF ] | |
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