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PDF LX5510B Data sheet ( Hoja de datos )
| Número de pieza | LX5510B | |
| Descripción | InGaP HBT 2.4 - 2.5 GHz Power Amplifier | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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LX5510B
www.DataSheet4U.com
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5510B is a power amplifier For +19dBm OFDM output power
optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a
the 2.4-2.5 GHz frequency range. The low EVM (Error-Vector Magnitude) of
PA is implemented as a two-stage 3.0%, and consumes 135mA total DC
monolithic microwave integrated current with the nominal 3.3V bias.
circuit (MMIC) with active bias and The LX5510B is available in a 16-
input/output pre-matching.
pin 3mmx3mm micro-lead package
The device is manufactured with an (MLP). The compact footprint, low
InGaP/GaAs Heterojunction Bipolar profile, and excellent thermal capability
Transistor (HBT) IC process of the MLP package makes the
(MOCVD). With a single supply of LX5510B an ideal solution for medium-
3.3 volts and a low quiescent current gain power amplifier requirements for
of 70mA the power gain is 19dB 2.4 – IEEE 802.11b/g applications
2.5GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current ICQ
~70mA
Power Gain ~19dB @ 2.45GHz
and Pout = 19dBm
Total Current 135mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm2)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
TA (°C)
0 to 70
Plastic MLPQ
LQ 16 pin
RoHS Compliant / Pb-free
LX5510BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the
part number. (i.e. LX5510BLQ-TR)
This device is classified as EDS Level 1 in accordance with MIL-
STD-883, Method 3015 (HBM) testing. Appropriate ESD
procedures should be used when handling this device.
Copyright © 2004
Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
1 page  
LX5510B
www.DataSheet4U.com
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
EVALUATION BOARD
Recommended BOM
Location
C1
C2
C3
C4,C5
Value
2.7pF (0402)
2.4pF (0402)
3.9pF (0402)
1µF (0603)
L1,L2
R1
R2
R3
TL1
TL2
8.2nH(0402)
350 Ω (0402)
200 Ω (0402)
100 Ω (0402)
30/22 mil (L/W)
100/10 mil (L/W)
TL3
Substrate
60/10 mil (L/W)
10 mil GETEK
εr =3.9, tan δ = 0.01
50Ω Microstrip width: 22 mil
RF
Input
L1
C3
C1
C4
L2
C2
C5 R1 | R2
R3
RF
Output
VREF
Copyright © 2004
Rev. 1.0d, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet LX5510B.PDF ] | |
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