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Número de pieza | K1S3216B1C | |
Descripción | 2Mx16 bit Uni-Transistor Random Access Memory | |
Fabricantes | Samsung semiconductor | |
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Document Title
2Mx16 bit Uni-Transistor Random Access Memory
Revision History
Revision No. History
0.0 Initial Draft
0.1 Revised
- Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0
- Changed Standby Current(CMOS) from 80uA to 100uA
Preliminary
UtRAMwww.DataSheet4U.com
Draft Date
Remark
January 16, 2003 Advanced
June 9, 2003
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.1
June 2003
1 page K1S3216B1C
Preliminary
UtRAMwww.DataSheet4U.com
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
Function
K1S3216B1C-FI70
K1S3216B1C-FI85
48-FBGA, 70ns, 1.8V/2.0V
48-FBGA, 85ns, 1.8V/2.0V
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. TA=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width ≤20ns.
3. Undershoot: -1.0V in case of pulse width ≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
VIH
VIL
Min
1.7
0
1.4
-0.23)
Typ
1.8/2.0
0
-
-
Max
2.1
0
VCC+0.22)
0.4
Unit
V
V
V
V
CAPACITANCE1)(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Average operating current
Output low voltage
Output high voltage
Standby Current(CMOS)
Symbol
Test Conditions
ILI VIN=Vss to Vcc
ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH,
VIO=Vss to Vcc
ICC1 Cycle time=1µs, 100% duty, IIO=0mA, CS1≤0.2V, LB≤0.2V
or/and UB≤0.2V, CS2≥VCC-0.2V, VIN≤0.2V or VIN≥VCC-0.2V
ICC2 Cycle time=Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH
LB=VIL or/and UB=VIL, VIN=VIH or VIL
VOL IOL = 0.1mA
VOH IOH = -0.1mA
Other inputs=0~Vcc
ISB1 1) CS1≥VCC-0.2V, CS2≥VCC-0.2V(CS1 controlled) or
2) 0V ≤ CS2 ≤ 0.2V(CS2 controlled)
Min
-1
-1
-
-
-
1.4
-
Typ Max Unit
- 1 µA
- 1 µA
- 5 mA
- 30 mA
- 0.2 V
- -V
- 100 µA
- 5 - Revision 0.1
June 2003
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet K1S3216B1C.PDF ] |
Número de pieza | Descripción | Fabricantes |
K1S3216B1C | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung semiconductor |
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