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PDF SI7998DP Data sheet ( Hoja de datos )
| Número de pieza | SI7998DP | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si7998DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
30
RDS(on) (Ω)
0.0093 at VGS = 10 V
0.0124 at VGS = 4.5 V
0.0053 at VGS = 10 V
0.0070 at VGS = 4.5 V
ID (A) a
25
25
30
30
Qg (TYP.)
8.2 nC
15.3 nC
PowerPAK® SO-8 Dual
D1
D1 8
D2 7
D2 6
5
FEATURES
• TrenchFET® power MOSFET
• PWM optimized
• 100 % UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• System Power DC/DC
D1
D2
6.15 mm
1
Top View
5.15 mm
1
2 S1
3 G1
4 S2
G2
Bottom View
Ordering Information:
Si7998DP-T1-GE3 (Lead (Pb)-free and halogen-free)
G1
N-Channel MOSFET S1
G2
N-Channel MOSFET S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30 30
± 20 ± 20
25 a
30 a
25 a
30 a
15 b, c
21 b, c
12 b, c
17 b, c
60 80
19 30 a
3 b, c
3.3 b, c
25 40
31 80
22 40
14 25
3.6 b, c
4 b, c
2.3 b, c
2.5 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1 CHANNEL-2
TYP. MAX. TYP. MAX.
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
26 35 22 31
4 5.5 2.2 3.1
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions for channel-1 and channel-2 is 80 °C/W.
S14-1941-Rev. C, 29-Sep-14
1
Document Number: 68970
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.030
0.025
Si7998DP
Vishay Siliconix
ID = 15 A
TJ = 150 °C
10
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.020
0.015
0.010
TJ = 125 °C
0.005
TJ = 25 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.4
2.2
2.0
ID = 250 µA
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
40
32
24
16
8
0
0.001
0.01
0.1 1 10
Time (s)
100
Single Pulse Power
1000
100
Limited by RDS(on)*
10
100 µs
1 ms
1 10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-1941-Rev. C, 29-Sep-14
5
Document Number: 68970
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si7998DP
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68970.
S14-1941-Rev. C, 29-Sep-14
11
Document Number: 68970
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet SI7998DP.PDF ] | |
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