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PDF SI7940DP Data sheet ( Hoja de datos )
| Número de pieza | SI7940DP | |
| Descripción | Dual N-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Si7940DP
Viswwhwa.DyatSaSihleiect4oUn.coixm
Dual N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
12
rDS(on) (W)
0.017 @ VGS = 4.5 V
0.025 @ VGS = 2.5 V
ID (A)
11.8
9.8
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D PWM Optimized
APPLICATIONS
D Point-of-Load Synchronous Rectifier
- 5-V or 3.3-V BUS Step Down
- Qg Optimized for 500-kHz + Operation
D Synchronous Buck Shoot-Through Resistant
PowerPAKt
D1 D2
6.15 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
12
"8
11.8
9.5
20
2.9
3.5
2.2
-55 to 150
7.6
6.1
1.1
1.4
0.9
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71845
S-21167—Rev. B, 29-Jul-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
26
60
3.9
Maximum
35
85
5.5
Unit
_C/W
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
Square Wave Pulse Duration (sec)
10- 1
Si7940DP
Viswwhwa.DyatSaSihleiect4oUn.coixm
1
Document Number: 71845
S-21167—Rev. B, 29-Jul-02
www.vishay.com
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7940DP.PDF ] | |
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