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PDF SI7923DN Data sheet ( Hoja de datos )
| Número de pieza | SI7923DN | |
| Descripción | Dual P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si7923DN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.047 @ VGS = −10 V
−30
0.075 @ VGS = −4.5 V
PowerPAK 1212-8
ID (A)
−6.4
−5
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
Package
APPLICATIONS
D Portable
− Battery Switch
− Load Switch
S
S
RoHS
COMPLIANT
3.30 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Ordering Information: Si7923DN-T1—E3 (Lead (Pb)-Free)
Bottom View
G
D
P-Channel MOSFET
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS −30
VGS "20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
−6.4
−4.3
−4.6
−3.1
−20
−2.3
−1.1
2.8 1.3
1.5 0.85
−55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
35
75
4
Maximum
44
94
5
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72622
S-51129—Rev. B, 13-Jun-05
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Si7923DN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
0.01
10−4
10−3
10−2
Square Wave Pulse Duration (sec)
10−1
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72622.
Document Number: 72622
S-51129—Rev. B, 13-Jun-05
www.vishay.com
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7923DN.PDF ] | |
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