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PDF SI7911DN Data sheet ( Hoja de datos )
| Número de pieza | SI7911DN | |
| Descripción | Dual P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Si7911DN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.051 @ VGS = - 4.5 V
- 20 0.067 @ VGS = - 2.5 V
0.094 @ VGS = - 1.8 V
ID (A)
- 5.7
- 5.0
- 4.2
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D New Low Thermal Resistance PowerPAKr
Package
APPLICATIONS
D Portable
- PA Switch
- Battery Switch
- Load Switch
PowerPAK 1212-8
S1 S2
3.30 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Ordering Information: Si7911DN-T1
Bottom View
G1
D1
P-Channel MOSFET
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 20
"8
- 5.7 - 4.2
- 4.1 - 3.0
- 20
- 2.1 - 1.1
2.5 1.3
1.3 0.85
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
40
75
5.6
Maximum
50
94
7
Unit
_C/W
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1 0.05
0.02
Single Pulse
Si7911DN
Viswwhwa.DyatSaSihleiceto4Un.cioxm
0.01
10 - 4
10 - 3
10 - 2
Square Wave Pulse Duration (sec)
10 - 1
1
Document Number: 72340
S-31612—Rev. A, 11-Aug-03
www.vishay.com
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7911DN.PDF ] | |
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