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PDF APT200GT60JRDQ4 Data sheet ( Hoja de datos )
| Número de pieza | APT200GT60JRDQ4 | |
| Descripción | Thunderbolt IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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600V, 200A, VCE(ON) = 2.0V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior rugged-
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
Low EMI, High Reliability
• RoHS Compliant
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
Maximum Ratings
Symbol Parameter
VCES
VGE
Collector-Emitter Voltage
Gate-Emitter Voltage
IC1 Continuous Collector Current @ TC = 25°C
IC2
ICM
SSOA
PD
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
TJ, TSTG Operating and Storage Junction Temperature Range
All Ratings: TC = 25°C unless otherwise specified.
Ratings
Unit
600
Volts
±30
195
100 Amps
600
600A @ 600V
595
Watts
-55 to 150
°C
Static Electrical Characteristics
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
Gate Threshold Voltage (VCE = VGE, IC = 4.0mA, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C)
Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±30V)
Min Typ Max Unit
600 -
-
345
Volts
1.6 2.0 2.5
- 2.5 -
- - 50
μA
- - 1500
- - 600 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
100,000
10,000
Cies
1,000
Coes
Cres
100
0 100 200 300 400 500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1000
100
APT200GT60JRDQ4
www.DataSheet4U.com
10
1
0.1 1
10
100 1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.25
0.20
D = 0.9
0.7
0.15
0.10
0.5
0.3
Note:
t1
0.05
0.1
t2
Duty Factor D = t1/t2
0.05
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
40
35 75°C
30
25
100°C
Fmax = min (fmax, f max2)
20
15
0.05
fmax1 = t d(on) + tr + td(off) + tf
10
TJ =
TC =
125°C
75°C
D = 50 %
5 VCE = 400V
RG = 1.0Ω
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APT200GT60JRDQ4.PDF ] | |
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