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PDF DSEC30-04A Data sheet ( Hoja de datos )
| Número de pieza | DSEC30-04A | |
| Descripción | HiPerFRED Epitaxial Diode with common cathode and soft recovery | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
DSEC 30-04A
www.DataSheet4U.com
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
IFAV = 2x15 A
VRRM = 400 V
trr = 30 ns
VRSM
V
400
VRRM
V
400
Type
DSEC 30-04A
ACA
TO-247 AD
A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
TC = 145°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = tbd A; L = tbd µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
mounting torque
typical
Maximum Ratings
50 A
15 A
tbd A
tbd mJ
tbd
-55...+175
175
-55...+150
95
0.8...1.2
6
A
°C
°C
°C
W
Nm
g
Symbol
IR ①
VF ②
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C;
TVJ = 150°C;
VR = VRRM
VR = VRRM
IF = 15 A;
TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
100
0.5
1.06
1.47
µA
mA
V
V
0.25
30
1.6
K/W
K/W
ns
5.0 6.3
A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
Features
● International standard package
● Planar passivated chips
● Very short recovery time
● Extremely low switching losses
● Low IRM-values
● Soft recovery behaviour
● Epoxy meets UL 94V-0
Applications
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode in converters
and motor control circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Inductive heating
● Uninterruptible power supplies (UPS)
● Ultrasonic cleaners and welders
Advantages
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low
EMI/RFI
● Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages IXYS Data Book
1-1
1 page | ||
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